![nanoHUB.org - Courses: ECE 606: Solid State Devices - Professors Muhammad A. Alam and Mark Lundstrom: 01a nanoHUB.org - Courses: ECE 606: Solid State Devices - Professors Muhammad A. Alam and Mark Lundstrom: 01a](https://nanohub.org/app/site/courses/12/3403/slides/006.08.jpg)
nanoHUB.org - Courses: ECE 606: Solid State Devices - Professors Muhammad A. Alam and Mark Lundstrom: 01a
![Figure 1 from Threshold-voltage analysis of short- and narrow-channel MOSFET's by three-dimensional computer simulation | Semantic Scholar Figure 1 from Threshold-voltage analysis of short- and narrow-channel MOSFET's by three-dimensional computer simulation | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/da9751bb22c8dee2fc0c659988164b4f842e2dde/2-Figure1-1.png)
Figure 1 from Threshold-voltage analysis of short- and narrow-channel MOSFET's by three-dimensional computer simulation | Semantic Scholar
![A review of narrow-channel effects for STI MOSFET's: A difference between surface- and buried-channel cases - ScienceDirect A review of narrow-channel effects for STI MOSFET's: A difference between surface- and buried-channel cases - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0038110199001574-gr1.gif)
A review of narrow-channel effects for STI MOSFET's: A difference between surface- and buried-channel cases - ScienceDirect
Figure 2 | Reducing the Short Channel Effect of Transistors and Reducing the Size of Analog Circuits
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